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PTMA210452EL ptma210452fl confidential, limited internal distribution data sheet 1 of 11 rev. 06, 2009-09-01 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTMA210452EL package h-33265-8 ptma210452fl package h-34265-8 broadband performance v dd = 28 v, i dq1 = 200 ma, i dq1 = 400 ma, fixture tuned for 2110 ? 2140 mhz 0 5 10 15 20 25 30 35 1700 1800 1900 2000 2100 2200 2300 2400 2500 frequency (mhz) gain (db) -35 -30 -25 -20 -15 -10 -5 0 return loss (db) gain return loss description the PTMA210452EL and ptma210452fl are wideband, 45-watt, 2-stage, ldmos integrated amplifiers intended for use in all typical modulation formats from 1900 to 2200 mhz. these devices are offered in thermally-enhanced ceramic packages with solder-friendly plating for cool and reliable operation. wideband rf ldmos integrated power amplifier 45 w, 1900 ? 2200 mhz features ? designed for wide rf and modulation bandwidths and low memory effects ? typical two-carrier wcdma performance at 2140?mhz, 28 v - average output power = 3.2 w - linear gain = 28 db - efficiency = 10.5% - imd3 = ?47 dbc ? typical two-tone performance, 2140 mhz, 28 v - output power (pep) = 45 w at im3 = ?30 dbc - efficiency = 32% ? capable of handling 10:1 vswr @ 28 v, 45 w (cw) output power ? integrated esd protection. meets hbm class 1b (minimum), per jesd22-a114f ? thermally-enhanced packages, pb-free and rohs compliant, with solder-friendly plating *see infineon distributor for future availability. rf characteristics two-carrier wcdma measurements (tested in infineon test fixture ) v dd = 28 v, i dq1 = 200 ma (tuned for linearity), i dq2 = 450 ma (tuned for linearity & efficiency) , p out = 3.2 w average, ? 1 = 2135 mhz, ? 2 = 2145 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit input return loss irl ? ?16 ?10 db gain g ps 26.5 28 ? db drain efficiency h d 9 10.5 ? % intermodulation distortion, 2-channel wcdma imd ?43 ?47 ? dbc
data sheet 2 of 11 rev. 06, 2009-09-01 PTMA210452EL ptma210452fl confidential, limited internal distribution maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c input power p in 25 dbm total device dissipation p d 135 w above 25c derate by 0.8 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c) stage 1 r q jc 3.5 c/w stage 2 r q jc 1.3 c/w rf characteristics small-signal cw measurements ( not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 28 v, i dq1 = 200 ma, i dq2 = 450 ma, p out = 1 w, ? = 2140 mhz characteristic conditions symbol min typ max unit gain flatness 1 w / 30 mhz d g ? 0.10 0.5 db phase linearity ? ?1 +0.6 +1 o/60 mhz group delay ? = 2140 mhz td ? 2.16 ? ns dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a final stage on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on)1 ? 3.5 ? w r ds(on)2 ? 0.56 ? w operating gate voltage v ds = 28 v, i dq1 = 200 ma, v gs 2.0 2.5 3.0 v i dq2 = 450 ma gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a
data sheet 3 of 11 rev. 06, 2009-09-01 PTMA210452EL ptma210452fl confidential, limited internal distribution *see infineon distributor for future availability. ordering information type and version package outline package description shipping marking PTMA210452EL v1 h-33265-8 thermally-enhanced slotted flange tray PTMA210452EL ptma210452fl v1 h-34265-8 thermally-enhanced earless flange tray ptma210452fl typical performance (data taken in a production test fixture) two-tone at selected frequencies v dd = 28 v, i dq1 = 200 ma, i dq2 = 430 ma 0 5 10 15 20 25 30 35 40 45 30 33 36 39 42 45 output power, avg. (dbm) pae (%) -60 -55 -50 -45 -40 -35 -30 -25 -20 imd3 (dbc) efficiency imd3 ? = 2110 mhz ? = 2140 mhz ? = 2170 mhz cw performance v dd = 28 v, i dq1 = 200 ma, i dq2 = 400 ma 10 15 20 25 30 35 40 30 32 34 36 38 40 42 44 46 48 output power (dbm) gain (db) 0 10 20 30 40 50 60 gain efficiency ? = 2110 mhz ? = 2140 mhz ? = 2170 mhz power added efficiency (%)
data sheet 4 of 11 rev. 06, 2009-09-01 PTMA210452EL ptma210452fl confidential, limited internal distribution typical performance (cont.) is-95 at selected frequencies v dd = 28 v, i dq1 = 200 ma, i dq2 = 430 ma -65 -60 -55 -50 -45 -40 -35 28 30 32 34 36 38 40 42 output power (dbm) acpr (dbc) 0 5 10 15 20 25 acpr efficiency power added efficiency (%) ? = 2110 mhz ? = 2140 mhz ? = 2170 mhz 6-carrier td-cdma modulation spectrum performance v dd = 28 v, i dq1 = 280 ma, i dq2 = 390 ma, ? = 2017.5 mhz -50 -45 -40 -35 -30 27 29 31 33 35 37 39 output power (dbm) 0 5 10 15 20 drain efficiency (%) efficiency 1.6 mhz 3.2 khz modulation spectrum (dbc) two-carrier wcdma performance v dd = 28 v, i dq1 = 200 ma, i dq2 = 430 ma, ? = 2110 mhz, par = 8.5 db, 10 mhz spacing 0 5 10 15 20 25 30 26 30 34 38 42 output power, avg. (dbm) pae (%) -55 -50 -45 -40 -35 -30 -25 imd3 (dbc) efficiency imd3 ? = 2110 mhz ? = 2140 mhz ? = 2170 mhz wcdma at selected frequencies v dd = 28 v, i dq1 = 200 ma, i dq2 = 430 ma, tm 1, 64 channel, 67% clipping -55 -50 -45 -40 -35 -30 -25 28 30 32 34 36 38 40 42 output power (dbm) acpr (dbc) 0 5 10 15 20 25 acpr efficiency power added efficiency (%) ? = 2110 mhz ? = 2140 mhz ? = 2170 mhz
data sheet 5 of 11 rev. 06, 2009-09-01 PTMA210452EL ptma210452fl confidential, limited internal distribution broadband circuit impedance frequency z source w z load w mhz r jx r jx 1900 25.2 20.4 8.8 12.2 2110 26.1 27.8 6.1 16.5 2140 26.2 28.9 5.9 17.1 2170 26.5 30.3 5.6 17.8 2200 26.6 31.6 5.2 18.6 z load d s in 0 . 3 0 . 2 0 . 4 a r d g e n e r a t o r - - - > 0 . 0 5 0 . 4 5 2200 mhz 2200 mhz 1900 mhz z load z source 1900 mhz z 0 = 50 w gate ? source voltage vs. temperature v dd = 27 v, i dq1 = 110 ma, i dq2 = 335 ma 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -30 -10 10 30 50 70 90 temperature (c) normalized gate ? source voltage (threshold), v slope = ?1.3 mv/c typical performance (cont.)
data sheet 6 of 11 rev. 06, 2009-09-01 PTMA210452EL ptma210452fl confidential, limited internal distribution reference circuit ? for evaluation only reference circuit schematic for ? = 2140 mhz circuit assembly information dut PTMA210452EL or ptma210452fl ldmos ic pcb 0.76 mm [.030"] thick, e r = 3.48 rogers ro4350 1 oz. copper microstrip electrical characteristics at 2140 mhz dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.129 l , 49.7 w 11.00 x 1.70 0.433 x 0.067 l 2 0.114 l , 49.7 w 9.68 x 1.70 0.381 x 0.067 l 3 0.040 l , 10.4 w 3.10 x 13.00 0.122 x 0.512 l 4 0.013 l , 10.4 w 1.02 x 13.00 0.039 x 0.512 l 5 0.024 l , 34.1 w 2.01 x 3.00 0.079 x 0.118 l 6 0.066 l , 34.1 w 5.46 x 3.00 0.215 x 0.118 l 7 0.162 l , 43.4 w 13.67 x 2.11 0.538 x 0.083 l 8 0.004 l , 49.7 w 0.38 x 1.70 0.015 x 0.067 l 9 0.050 l , 49.7 w 4.24 x 1.70 0.167 x 0.067 l 10, l 11 0.128 l , 61.2 w 11.00 x 1.19 0.433 x 0.047 c20 12pf 0.1f v d2 PTMA210452EL ptma210452fl rf_in c2 10f c3 1f c5 12pf c22 10f c21 1f c23 100f 50v c26 1f c27 10f c28 100f 50v dut 1 2 3 5 6 7 4 8 c31 3pf l 3 l 4 l 11 v g1 c6 10f c7 1f c8 0.1f c9 12pf c10 10f c11 1f c12 0.1f 12pf g2 v v d1 c1 100f 50v a210452efl_bd_7-31-08 c4 0.1f c29 1.1pf c13 c24 12pf rf_out c32 12pf l 9 c30 1.8pf l 5 l 7 l l 6 c25 0.1f c19 8 l 10 l 2 l 1
data sheet 7 of 11 rev. 06, 2009-09-01 PTMA210452EL ptma210452fl confidential, limited internal distribution reference circuit (cont.) a210452efl_cd_4-30-08 v d2 rf_in rf_out c19 c2 c4 c30 c31 c32 c22 c20 c5 c11 c6 c7 c8 c13 c25 c27 c24 c9 c12 c10 c29 c1 c23 c3 c21 c26 c28 v d1 v g1 v g2 v d2 reference circuit assembly diagram (not to scale)* component description suggested p/n or comment component description manufacturer p/n or comment c1, c23, c28 electrolytic capacitor 100 f, 50 v digi-key pce3718ct-nd c2, c6, c10, c22, c27 ceramic capacitor 10 f murata grm422y5v106z050al c3, c7, c11, c21, c26 ceramic capacitor 1 f digi-key 445-1411-2-nd c4, c8, c12, c20, c25 capacitor, 0.1 f digi-key 399-1267-2-nd c5, c9, c13, c19, c24, c32 ceramic capacitor 12 pf atc 600s120jt c29 ceramic capacitor 1.1 pf atc 600s1r1bt c30 ceramic capacitor 1.8 pf atc 600s1r8bt c31 ceramic capacitor 3 pf atc 600s3r0bt not used c14, c15, c16, c17, c18 *gerber files for this circuit available on request
data sheet 8 of 11 rev. 06, 2009-09-01 PTMA210452EL ptma210452fl confidential, limited internal distribution package specifications package h-33265-8 outline diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. pins: s = source; see page 10 for complete list and diagram. 3. lead thickness: 0.127 0.025 [0.005 0.001]. 4. gold plating less than 0.25 micron [10 microinch]. 5. all tolerances 0.127 [0.005] unless specified otherwise. 6. primary dimensions are inches, alternate dimensions are mm. 15.240.51 [.600.020] 2.540.51 [.100.020] (45 x 2.03 [.08]) c l 1.02 [.040] 0.038 [.0015] -a- 20.32 [.800] 10.16 [.400] sph 1.57 [.062] 3.68.38 [.145.015] 10.16 [.400] window frame & lid 7.11 [.280] 4x r 0.63 [.025] max window frame 4x r 0.13 [.05] max lid 9.55 [.376] ref 2x 2.21 [.087] 0.76 [.030] 6x 0.406 [.016] 2x 3.48 [.137] 2x 4.57 [.180] 9.78 [.385] flange 2x r1.59 [r.063] s h-33+34265_pos_33265-8_0801 1 2 3 5 4 6 7 8 15.24 [.600] l c c l 4x r1.52 [r.060]
data sheet 9 of 11 rev. 06, 2009-09-01 PTMA210452EL ptma210452fl confidential, limited internal distribution package specifications (cont.) package h-34265-8 outline diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. pins: s = source; see page 10 for complete list and diagram. 3. lead thickness: 0.127 0.025 [0.005 0.001]. 4. gold plating less than 0.25 micron [10 microinch]. 5. all tolerances 0.127 [0.005] unless specified otherwise. 6. primary dimensions are inches, alternate dimensions are mm. 15.240.51 [.600.020] 2.540.51 [.100.020] (45 x 2.03 [.08]) 1.02 [.040] 0.038 [.0015] -a- 10.16 [.400] 10.16 [.400] sph 1.57 [.062] 3.68.38 [.145.015] 7.11 [.280] 4x r 0.63 [.025] max flange 4x r 0.13 [.05] max lid 9.55 [.376] ref 2x 2.21 [.087] 0.76 [.030] 6x 0.406 [.016] 2x 3.48 [.137] 2x 4.57 [.180] s h-33+34265_pos_34265-8_0801 1 2 3 5 4 6 7 l c c l 10.16 [.400] sq flange & lid 8 c l
data sheet 10 of 11 rev. 06, 2009-09-01 PTMA210452EL ptma210452fl confidential, limited internal distribution package specifications (cont.) package h-3x265-8 pinout pin # function s(flange) source 1 v d1 2 v g1 thermal fet 3 v g1 4 rf in 5 v g1 6 v g2 7 v g2 thermal fet find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower 4 8 1 2 5 6 3 7 a 210452 efl pd pinout 2008 10 07
data sheet 11 of 11 rev. 06, 2009-09-01 PTMA210452EL/fl v1 confidential, limited internal distribution revision history: 2009-09-01 data sheet previous version: 2009-01-30, data sheet page subjects (major changes since last revision) 1 updated features and revised vswr rating goldmos ? is a registered trademark of infineon technologies ag. edition 2009-09-01 published by infineon technologies ag 81726 munich , germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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